Developments in laser wakefield accelerators:From single-stage to two-stage

Laser wakefield accelerators(LWFAs)are compact accelerators which can produce femtosecond high-energy electron beams on a much smaller scale than the conventional radiofrequency accelerators.It is attributed to their high acceleration gradient which is about 3 orders of magnitude larger than the traditional ones.The past decade has witnessed the major breakthroughs and progress in developing the laser wakfield accelerators.To achieve the LWFAs suitable for applications,more and more attention has been paid to optimize the LWFAs for high-quality electron beams.A single-staged LWFA does not favor generating controllable electron beams beyond 1 Ge V since electron injection and acceleration are coupled and cannot be independently controlled.Staged LWFAs provide a promising route to overcome this disadvantage by decoupling injection from acceleration and thus the electron-beam quality as well as the stability can be greatly improved.This paper provides an overview of the physical conceptions of the LWFA,as well as the major breakthroughs and progress in developing LWFAs from single-stage to two-stage LWFAs.     

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Instability of a black hole with f (R) global monopole under extended uncertainty principle

We consider the evolution of a black hole involving an f(R) global monopole based on the Extended Uncertainty Principle (EUP). The black hole evolutions refer to the instability due to the Parikh-Kraus-Wilczeck tunneling radiation or fragmentation. It is found that the EUP corrections make the entropy difference larger to encourage the black hole to radiate more significantly. We also show that the appearance of the EUP effects results in the black hole's division. The influence from the global monopole and the revision of general relativity can also adjust the black hole evolution simultaneously but cannot change the final result that the black hole will not be stable because of the EUP's effects.     

二维量子片及其光学研究进展

以石墨烯为代表的二维材料因其独特的结构和优异性能而受到广泛关注。随着二维材料在无限小的方向不断发展,二维(材料)量子片逐渐引起人们极大的兴趣。二维量子片不仅保留了二维材料的本征特性,而且表现出量子限域和突出的边缘效应,为二维材料的潜在应用带来全新机遇。本文详细介绍了二维量子片的基本概念,制备现状与光学性能的研究进展,特别强调了二维量子片本征、普适和规模制备的实现及其重大意义。此外,重点关注了二维量子片的光致发光特性以及在非线性光学、固态发光器件等领域的应用。最后,分析了二维量子片的发展趋势以及面临的主要挑战。     

纳秒脉冲等离子体合成射流激励器的流场特性分析

采用一台高重频、快上升沿纳秒脉冲电源作为激励源,对典型的双电极合成射流激励器进行放电,通过粒子图像测速法（particle image velocimetry,PIV）测量放电实验中激励器稳定流场特性以及发展速度.分析实验结果发现,随着重复频率的提高,合成射流的平均发展速度也随之增大,1 kHz时的平均速度最高达到28.28 m/s,并在单脉冲能量远低于微秒脉冲的情况下,实现了更快的稳态流场控制,表明高重复频率下,更多次数的脉冲放电可提高激励总能量,有效地弥补纳秒脉冲单脉冲输出能量不足的缺点.而且频率越高,流场发展速度越快,说明高重频工作模式会对输出总能量有补偿作用.      

可搬运铷喷泉原子钟量子化轴磁场的设计与优化

喷泉钟量子化轴磁场的空间均匀性和时间稳定性是制约原子钟输出频率稳定度和不确定度的重要因素.从外磁场屏蔽、磁场线圈设计、线圈电流源稳定性等方面考虑,构建并优化设计了一套可搬运铷喷泉原子钟量子化轴磁场系统.为了消除环境磁场对量子化轴磁场的影响,使用5层坡莫合金磁屏蔽进行外磁场的屏蔽;利用4组对称的补偿线圈,通过计算给予合适的电流,获得喷泉钟内部30 cm原子自由飞行尺度内磁场波动小于1 nT;通过改善C场供电电流方式,从而优化量子化轴磁场的时间稳定性,磁场随时间的波动小于0.1 nT.优化后喷泉钟长期频率稳定度达2.9×10-16,磁场空间分布不均匀性带来的二阶塞曼频移不确定度为3.4×10-19,由磁场随时间波动带来的二阶塞曼频移的不确定度为5.1×10-17.     

Vector NLS solitons interacting with a boundary

We construct multi-soliton solutions of the n-component vector nonlinear Schrödinger equation on the half-line subject to two classes of integrable boundary conditions (BCs): the homogeneous Robin BCs and the mixed Neumann/Dirichlet BCs. The construction is based on the so-called dressing the boundary, which generates soliton solutions by preserving the integrable BCs at each step of the Darboux-dressing process. Under the Robin BCs, examples, including boundary-bound solitons, are explicitly derived; under the mixed Neumann/Dirichlet BCs, the boundary can act as a polarizer that tunes different components of the vector solitons. Connection of our construction to the inverse scattering transform is also provided.     

地铁车辆段咽喉区上盖建筑振动影响

城区地铁车辆段进行上盖物业开发可节约、集约利用地铁用地,缓解城市土地资源稀缺问题。地铁车辆段特别是其咽喉区振动是上盖物业开发的环境制约因素。为研究地铁车辆段咽喉区对上盖建筑的振动影响,建立轨道-地基土-上盖建筑三维有限元模型,采用等效荷载法,将实地采样的钢轨铅垂向振动加速度转化为列车钢轨铅垂向振动线荷载,作用于轨道上。在结合实测数据验证模型合理性的基础上,定量研究上盖平台厚度和离地高度、上盖建筑层数和结构等因素对室内环境振动(铅垂向Z振级VL_Zmax)的影响。结果表明,地铁车辆段咽喉区对高层建筑的振动影响整体大于多层建筑;由于振动波在屋顶自由端发生反射并与入射波叠加,导致不同楼层楼板中央VL_Zmax随楼层升高略有增加;框架结构建筑室内VL_Zmax大于剪力墙结构;增加上盖平台厚度可减小建筑室内VL_Zmax;上盖建筑室内VL_Zmax随上盖平台离地高度增加而增加(即随建筑楼层绝对离地高度增加而增大)。研究结果可为地铁车辆段上盖物业开发振动污染防治提供理论和工程技术依据。     

耐高温CrAlON基太阳能光谱选择性吸收涂层的制备与热稳定性

光谱选择性吸收涂层是太阳能光-热利用技术的核心部件,直接决定着整个系统的转换效率,为了提高涂层的选择吸收性和热稳定性,本文提出以金属氮化物替代金属纳米颗粒,构建纳米晶-非晶异质结构的思路,并采用多弧离子镀制备了Cr/CrAlN/CrAlON/CrAlN/CrAlON/CrAlO多吸收层光谱选择性吸收涂层,其吸收率达0.90,发射率为0.15,而且在500℃、大气条件下时效220 h后,涂层的吸收率升至0.94,发射率则降至0.10,并且能够保持稳定1000 h以上.微观组织分析表明,高温时效处理后,吸收层发生部分晶化形成了大量氮化物纳米颗粒,增加了对太阳光的散射和吸收,而CrAlO减反射层中的部分晶化形成了Al2O3和Cr2O3纳米颗粒,这不仅可以保护内部涂层不被氧化,而且Al2O3的形成可以增加太阳光的透过率,减少涂层表面反射,是多吸收层CrAlON基光谱选择性吸收涂层选择吸收性能提高的主要原因.同时,氮化物纳米颗粒被非晶基体均匀地分隔开来,形成了纳米晶-非晶异质结构,非晶在高温时效处理过程中只发生结构弛豫,从而有效地抑制了高温条件下的原子扩散,保证涂层中的纳米颗粒在高温下不发生明显团聚,这是多吸收层CrAlON基涂层具有良好热稳定性的最主要原因.这些研究结果对提高金属陶瓷光谱选择性吸收涂层的综合性能,实现更高效率的太阳能光-热利用具有重大意义.